Journal of Naval Sciences and Engineering

25-44

Authors: Doç. Dr. Atilgan ALTINKÖK, Doç. Dr. Murat OLUTAŞ

The use of Transparent Conductive Oxide (TCO) thin films in technology has increased in the last decades. These materials have good electrical conductivity visible light transmittance simultaneously. TCOs have many technology applications such as thin film transducers (TFTs), conductive electrodes, capacitors, sensors, electrochemical devices. Although indium tin oxide (ITO) is the most common semiconductor among these materials, studies on N-type indium-gallium-zinc oxide (IGZO) that better electrical properties (electron mobility µFE>10 cm2 /V.s) cm2 / Vs) have increased in recent years. In this study, IGZO thin films are produced which have a very homogeneous amorphous structure via using thermal evaporation system on glass substrates. Structural characterization was carried out by atomic force microscopy and scanning electron microscopy on IGZO thin films for various thickness and annealing temperatures. Transmittance and thickness measurements were performed using UV-VIS spectroscopy and profilometer for the investigation of optical properties, respectively. It is seen that grain size grows and grain boundaries decreases when annealing temperature is increased. This results in reduced roughness and increased optical transmittance and energy gap (Eg).

71-83

Authors: Doç. Dr. Atilgan ALTINKÖK

NbN thin films are very useful superconducting materials for the electronic devices. Using sputter deposition technique is a cheap alternative to produce of NbN thin films on glass or SiO for the technology applications. The NbN films was coated on glass and SiO/Si substrates by DC magnetron sputtering technique. Pure Nb target was used the production of NbN thin films in different compositions of Argon and nitrogen gases. The effects of different substrate temperatures, sputtering power and, various ratios of Nitrogen/Argon gases were investigated on Superconducting Critical Temperature (Tc). It is seen that increasing the substrate temperature or sputtering power resulted in increased on the Tc. Thereby optimum condition values are deduced by the Residual Resistance Ratio (RRR) calculation and resistance-temperature (R-T) curves. It is observed that the substrate temperature and the flux of nitrogen gas effect (111) preferential orientation during the deposition, whereas the critical temperature of the thin films is affected by the of deposition chamber vacuum. Tc is also highly dependent on the Nitrogen and Argon pressures on sputtering deposited NbN films.