213-229
Identifying the Nature of Semiconductor’s Dislocation Density by Positron-Annihilation Spectroscopy Method. Overview
Authors: Evgeny P. Prokop'ev, Sergei S. Evstaf'ev, Sergei P. Timoshenkov, Boris M. Simonov, Viktor I. Grafutin, Aleksei S. Timoshenkov, Igor M. Britkov, Oleg M. Britkov
Number of views: 499
The key methods for positron annihilation study is: a) identifying spectrum of angle distribution of annihilation photons (URAF) ; the study of temporary distribution spectrums of annihilation photons (VRAF), characterized by intensity and lifetimes ; b) Doppler widening of annihilation line (DUAL), characterized by S parameter – is a correlation of central part of annihilation photopeak to the distribution area of annihilation photopeak. The VRAF method provides data on electronic density where the annihilation positron is located, and URAF and DUAL methods provide data on distribution of impulses and chemical composition of the environment, surrounding nano objects in the area of annihilation. The overview shows that these methods allow to identify the nature and the density of dislocations in semiconductors, as the effective centers for positrons capturing are negatively-charged and neutral dislocations.