1030-1035
Possible Synergetic Approaches to the Explanation of Nanomaterials High Properties
Authors: Yurii F. Kozlov, Yuri A. Chaplygin, Sergei P. Timoshenkov, Viktor I. Grafutin, Eugene P. Prokopev
Number of views: 393
The article is concerned with the atmospheric changes of silicon intrinsic point defects, testifies that concentration of silicon interstitial atoms and concentration of vacancies in silicon defects atmosphere are bi-state, transitions between which can be determined quasichemical reactions of Schlegel. Bi-state enables to control the existence of silicon interstitial atoms in certain conditions (for instance, creation of divacancy (traps and ) in the course of bombardement). Thereby, the author develops the hypothesis of nanomaterials high properties in terms of synergetic approach, explaining nanomaterials high properties on the basis of silicon in terms of synergetic approaches (for instance, layers of flexible silicon of nanometric size). In this case the surface of flexible silicon is the trap for silicon interstitial atoms and vacancies. In terms of nanomaterials, interfaces, pinholes, interstices, vacancies, etc. of nanometric size can serve as traps for interstitial atoms. The amount of such nanoobjects in nanomaterials is very high. That’s why mainly ( - critical value , wherein , ) is used. It may prevent nanomaterials from dislocation of generation, disordered regions and pinholes, originated from interstitial atoms and vacancies, formed in the process of nanomaterials work (especially under extreme conditions), which is one of the reasons of it high properties if compared to the properties of common materials.