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INFLUENCE OF THE PVD PROCESS PARAMETERS ON ZNO: AL THIN FILMS
Authors: P. Boryło, K. Matus, K. Lukaszkowicz, M. Szindler, K. Gołombek
Number of views: 352
In recent years a growing interest in searching new material for producing Transparent Conductive Layers (TLC) is observed. ZnO:Al thin films are this type material, interesting due to wide range of potential applications where it can be applied like: transparent electrodes, gas sensors, thin film transistors, sensor devices, electroluminescent diodes and others.
The aim of this paper is to discuss influence of the ZnO:Al film deposition parameters of PVD magnetron sputtering method on TCL structure and its chemical composition. It contains description of the ZnO:Al PVD magnetron sputtering deposition method. It discusses results obtained from the
analysis of the microstructure of ZnO:Al thin films using a high resolution scanning electron microscope, layers' surface topography determined with atomic force microscope and results of chemical composition analyses.